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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2014-03-01

发表刊物：PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

收录刊物：Scopus、EI、SCIE

卷号：57

页面范围：145-148

ISSN号：1386-9477

关键字：GaN; Nanowire; Ga; GaCl3

摘要：High quality GaN nanowires (NWs) were grown on a Si (1 0 0) substrate by using Ga and GaCl3 sources, which were placed at two different zones in a quartz tube, respectively. It was found that the GaCl3 source contributes to the growth of long and straight NWs. The effect of GaCl3 source on NWs growth was discussed. Structure and morphology of the NWs were characterized by X-ray diffraction and scanning electron microscopy, respectively. (C) 2013 Elsevier B.V. All rights reserved.