教授 博士生导师 硕士生导师
性别: 男
毕业院校: 北京邮电大学
学位: 博士
所在单位: 控制科学与工程学院
学科: 微电子学与固体电子学. 光学工程
电子邮箱: huihuang@dlut.edu.cn
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论文类型: 期刊论文
发表时间: 2011-05-01
发表刊物: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
收录刊物: SCIE、EI
卷号: 29
期号: 3
ISSN号: 1071-1023
摘要: Vertical indium phosphide nanowires (NWs) were grown at different temperatures by metalorganic chemical vapor deposition via a gold (Au)-assisted vapor-liquid-solid mechanism. At a low growth temperature (420 degrees C), the lengths of the NWs were diameter independent, which indicated that the NWs were grown with significant contributions from the direct impingement of the precursors onto the alloy droplets. In this process, the droplet acts as a catalyst rather than an adatom collector. However, at a high growth temperature (480 degrees C), the lengths of the NWs were inversely diameter dependent. The wurtzite percentage of NWs increases with the growth temperature. Room temperature photoluminescence properties of NWs grown under different temperatures were investigated. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3573985]