边继明
个人信息Personal Information
教授
博士生导师
硕士生导师
性别:男
毕业院校:中科院上海硅酸盐研究所
学位:博士
所在单位:物理学院
学科:微电子学与固体电子学. 凝聚态物理
办公地点:大连理工大学科技园C座301-1办公室
联系方式:E-mail:jmbian@dlut.edu.cn.
电子邮箱:jmbian@dlut.edu.cn
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- [281]Zhao Zi-Wen, Zhu Jin-Xia, Hu Li-Zhong, Zhang He-Qiu, Sun Jing-Chang, Bian Ji-Ming, Sun Kai-Tong, Chen Xi, Zhao Jian-Ze, Li Xue, Zhao, ZW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser D...[J],CHINESE PHYSICS LETTERS,2010,27(1)
- [282]张贺秋, 胡礼中, 边继明.Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pilsed Laser Dep...[J],Chinese Physics Letters,2010
- [283]边继明, 骆英民.Effects of substrate on the structure, morphology and optical properties of vertically aligned Zn...[J],Journal of Inorganic Material,2010,25(10):1115-1120
- [284]白亦真, 秦福文, 边继明, 赵纪军.Preparation and Characteristics of GaN Films on Freestanding CVD Thick[J],Chinese Physics Letters,2010,27(1):181021-181024
- [285]程传辉, 杜国同, 边继明.Organic solar cells with buffer[J],APPLIED PHYSICS LETTERS,2010,97(21):83305-83305
- [286]Li, Qingwei, Bian, Jiming, Sun, Jingchang, Wang, Jingwei, Luo, Yingmin, Kaitong, Yu, Dongqi, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Controllable growth of well-aligned ZnO nanorod arrays by low-temperature wet chemical bath dep...[J],APPLIED SURFACE SCIENCE,2010,256(6):1698-1702
- [287]Zou, C. W., Yan, X. D., Patterson, D. A., Emanuelsson, E. A. C., Bian, J. M., Gao, W., CW (reprint author), Univ Auckland, Sch Engn, Private Bag, Auckland 92019, New Zealand..Temperature sensitive crystallization of V2O5: from amorphous film to beta-V2O5 nanorods[J],CRYSTENGCOMM,2010,12(3):691-693
- [288]白亦真, 秦福文, 边继明.Deposition of GaN Films on Freestanding CVD Thick Diamond Films[J],Materials Science Forum,2010,654(1):1740-1743
- [289]Zou, C. W., Bian, J. M., CW (reprint author), Univ Auckland, Sch Engn, Auckland 92019, New Zealand..Comment on "Influence of growth mode on the structural, optical, and electrical properties of I...[J],APPLIED PHYSICS LETTERS,2009,95(12)
- [290]杜国同, 赵旺, 李香萍, 付艳萍, 夏小川, 张源涛, 董鑫, 杨天鹏, 朱慧超, 张宝林, 孙景昌, 赵涧泽, 梁红伟, 边继明.ZnO基p-n结的电注入发光研究[A],2009,9-10
- [291]Zou, C. W., Yan, X. D., Han, J., Chen, R. Q., Bian, J. M., Haemmerle, E., Gao, W., CW (reprint author), Univ Auckland, Sch Engn, Private Bag 92019, Auckland 1, New Zealand..Preparation and enhanced photoluminescence property of ordered ZnO/TiO2 bottlebrush nanostructu...[J],CHEMICAL PHYSICS LETTERS,2009,476(1-3):84-88
- [292]Zhao Zi-Wen, Fu Qiang, Hu Li-Zhong, Zhang He-Qiu, Sun Jing-Chang, Bian Ji-Ming, Liang Hong-Wei, Huo Bing-Zhi, Yu Dong-Qi, Chen Xi, Zhao, ZW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on...[J],CHINESE PHYSICS LETTERS,2009,26(5)
- [293]Gao, Xiang-Dong, Wei, Yan, Xiao-Dong, Zhuge, Fu-Wei, Bian, Ji-Ming, Li, Xiao-Min, W (reprint author), Univ Auckland, Dept Chem & Mat Engn, Private Bag 92019, Auckland Mail Ctr, Auckland 1, New Zealand..ZnO NANOPOROUS DISK-TiO2 NANOPARTICLE HYBRID FILM ELECTRODE FOR DYE-SENSITIZED SOLAR CELLS[J],FUNCTIONAL MATERIALS LETTERS,2009,2(1):27-31
- [294]Yu, D. Q., Wang, B., Hu, L. Z., Li, J., H., Zhang, H. Q., Bian, J. M., Zhu, J. X., Qiao, S. S., Chen, X., HQ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser dep...[J],APPLIED SURFACE SCIENCE,2009,255(8):4430-4433
- [295]张贺秋, 胡礼中, 边继明.Growth of ultralong ZnO microwire and its application in isolatable and flexible piezoelectric st...[J],Phys. Status Solidi A,2009,1-5
- [296]Sun Jing-Chang, Liang Hong-Wei, Zhao Jian-Ze, Bian Ji-Ming, Feng Qiu-Ju, Wang Jing-Wei, Zhao Zi-Wen, Du Guo-Tong, Sun, JC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Subs...[J],CHINESE PHYSICS LETTERS,2008,25(12):4345-4347
- [297]Yang, T. P., Sun, J. C., Dong, X., Zhang, B. L., Liang, H. W., Li, X. P., Cui, Y. G., Du, G. T., Zhu, H. C., Bian, J. M., JM (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China..Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD[J],MATERIALS RESEARCH BULLETIN,2008,43(12):3614-3620
- [298]赵涧泽, 孙景昌, 梁红伟, 冯秋菊, 边继明, 胡礼中, 张贺秋, 赵子文, 杜同国.脉冲激光沉积法在p型GaAs衬底上制备ZnO同质结发光二极管[A],2008,408-411
- [299]杜国同, 付艳萍, 马艳, 李香萍, 夏小川, 赵旺, 张源涛, 董鑫, 张宝林, 孙景昌, 赵涧泽, 梁红伟, 边继明.ZnO基p-n结的制备及其电注入发光研究[A],2008,387-390
- [300]Zhao, J. Z., Du, G. T., Liang, H. W., Sun, J. C., Bian, J. M., Feng, Q. J., Hu, L. Z., Zhang, H. Q., X. P., Luo, Y. M., HW (reprint author), Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion Electron Be, Dalian 116024, Peoples R China..Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substra...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008,41(19)