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主要任职: 材料科学与工程学院副院长

性别: 男

毕业院校: 大连理工大学

学位: 博士

所在单位: 材料科学与工程学院

学科: 材料学

电子邮箱: zhaoning@dlut.edu.cn

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Reverse Polarity Effect in Cu/Sn-9Zn/Ni Interconnect under High Current Density at High Temperature

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论文类型: 会议论文

发表时间: 2014-08-12

收录刊物: EI、CPCI-S、SCIE、Scopus

页面范围: 433-436

关键字: Liquid-solid electromigration (L-S EM); Sn-9Zn solder; intermetallic compound (IMC); reverse polarity effect; synchrotron radiation

摘要: Synchrotron radiation real-time imaging technology was conducted to in situ observe the interfacial reaction in line-type Cu/Sn-9Zn/Ni interconnect under a current density of 2.0 x 10(4) A/cm(2) at 230 degrees C. The reverse polarity effect in Cu/Sn-9Zn/Ni interconnects undergoing L-S EM was verified by the continuous growth of the intermetallic compound (IMC) layer at the cathode while the thinning of that at the anode under both flowing directions of electrons. This provided a clear evidence that Zn atoms migrated from the anode toward the cathode undergoing L-S EM, which is different from the normal diffusion behavior of atoms under the effect of electron current stressing. Since there was no back-stress in L-S EM, it is deduced that the abnormal diffusion behavior of Zn atoms was attributed to the electromigration flux, J(em), being greater than the chemical potential gradient flux, J(chem), during L-S EM under a high current density.

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