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个人信息Personal Information
教授
博士生导师
硕士生导师
主要任职:材料科学与工程学院副院长
性别:男
毕业院校:大连理工大学
学位:博士
所在单位:材料科学与工程学院
学科:材料学
办公地点:知远楼B515(新材料大楼)
电子邮箱:zhaoning@dlut.edu.cn
Dominant effect of high anisotropy in beta-Sn grain on electromigration-induced failure mechanism in Sn-3.0Ag-0.5Cu interconnect
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论文类型:期刊论文
发表时间:2016-09-05
发表刊物:JOURNAL OF ALLOYS AND COMPOUNDS
收录刊物:SCIE、EI、Scopus
卷号:678
页面范围:370-374
ISSN号:0925-8388
关键字:Anisotropy; Intermetallics; Diffusion; Grain boundaries; Microstructure; Scanning electron microscopy
摘要:The effect of high diffusivity anisotropy in beta-Sn grain on electromigration behavior of micro-bumps was clearly demonstrated using Sn-3.0Ag-0.5Cu solder interconnects with only two beta-Sn grains. The orientation of beta-Sn grain (theta is defined as the angle between the c-axis of beta-Sn grain and the electron flow direction) is becoming the most crucial factor to dominate the different electromigration-induced failure modes: 1) the excessive dissolution of the cathode Cu, blocking at the grain boundary and massive precipitation of columnar Cu6Sn5 intermetallic compounds ( IMCs) in the small angle q beta-Sn grain occur when electrons flow from a small angle theta beta-Sn grain to a large one; 2) void formation and propagation occur at the cathode IMC/solder interface and no Cu6Sn5 IMCs precipitate within the large angle theta beta-Sn grain when electrons flow in the opposite direction. The EM-induced failure mechanism of the two beta-Sn grain solder interconnects is well explained in viewpoint of atomic diffusion flux in beta-Sn. (C) 2016 Elsevier B.V. All rights reserved.