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论文类型：期刊论文

发表时间：2012-10-02

发表刊物：Journal of Physics: Conference Series

收录刊物：EI、Scopus

卷号：441

期号：1

ISSN号：17426588

摘要：The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl3) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl4) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl3based dry recess achieved a high maximum electron mobility of 141.5 cm2V-1s-1and a low interface state density.