论文成果
Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress
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- 论文类型：期刊论文
- 发表时间：2019-10-02
- 发表刊物：JOURNAL OF PHYSICS D-APPLIED PHYSICS
- 收录刊物：SCIE、EI
- 文献类型：J
- 卷号：52
- 期号：40
- ISSN号：0022-3727
- 关键字：4H-SiC; MOS capacitor; bias temperature stress; flatband voltage
instability; interfacial traps; mobile ions
- 摘要：Bias temperature stresses (BTSs) are critical factors that cause severe threshold voltage (V-th) instability in silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices. In this work, we studied the behavior of flatband voltage (V-fb) instability in 4H-SiC MOS capacitors under various BTSs from low temperature (LT) to high temperature (HT) considering the combined effects of interfacial traps and mobile ions. Results showed that nitrogen and nitrogen-hydrogen plasma passivation improved the V-fb instability. The initial sweeping gate voltage determined the direction of V-fb shift. BTSs from LT to HT induced different capacitance-voltage hysteresis characteristics. The V-fb shift was further separated according to the contribution of the interface trapped, oxide trapped, and mobile ionic charges. At LT, the charge trapping dominated the shift behavior. The interface trap density was also extracted by another high-frequency and quasi-static method, which was the same as the separated interface trap density at 100K, confirming the separation correctness of V-fb shift. At room temperature, charge trapping and mobile ions with very weak mobility contributed to the V-fb shift. At HT, mobile ions that counteracted the charge-trapping effect determined the V-fb shift, although the additional traps were activated in the interface and oxide. Physical models of V-fb instability under different temperature stresses were proposed. Finally, we chose the 100K, 273 K, and 423 K to analyze gate bias stresses and stress time induced V-fb instabilities as well as their mechanisms.
