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论文类型：期刊论文

发表时间：2013-01-01

发表刊物：JAPANESE JOURNAL OF APPLIED PHYSICS

收录刊物：SCIE、EI、Scopus

卷号：52

期号：1,SI

ISSN号：0021-4922

摘要：To gain a flat recess profile with uniform etching depth, dry recess experiment with different inductively coupled plasma (ICP) etching conditions was done on an AlGaN/GaN heterostructure. Trenching effect at the bottom near the sidewall was observed when positive photoresist was utilized and the ICP power was low. The recess profile was improved by adopting SiO2 as the etching mask and increasing the ICP power. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with different gate recess conditions were fabricated and characterized. The maximum field-effect mobility of 152.8 cm(-2) V-1 s(-1) and the minimum interface state density of 1.39 x 10(11) cm(-2) eV(-1) were obtained from the optimized gate recess condition with ICP power of 100 W, bias power of 20 W and etching mask of SiO2. (C) 2013 The Japan Society of Applied Physics