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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x-ray photoelectron spectroscopy
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论文类型：期刊论文
发表时间：2011-08-22
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：Scopus、SCIE、EI
卷号：99
期号：8
ISSN号：0003-6951
摘要：The chemical structure of SiO2/4H-SiC (0001) interface transition region is investigated using angle-dependent x-ray photoelectron spectroscopy. The relative intensities of various silicon oxycarbides (SiOxCy) components as a function of polar emission angle suggest that SiOC3, SiO2C2, SiO3C, and SiO2 have different depth distributions at the interface. Then a nonabrupt four-layer structure model is proposed. And the relative intensities of various SiOxCy species are fitted based on the model by an electron damping scheme. The well fitted results indicate that the SiO2/4H-SiC (0001) interface transition region can be described by a chemically nonabrupt four-layer structure model well. (C) 2011 American Institute of Physics. [doi:10.1063/1.3628322]