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[431]李晓娜, 聂冬, 董闯.碳掺杂β-FeSi2薄膜的电子显微学研究[J],电子显微学报,2002,21(1):43-51
[432]聂冬, 李晓娜, 董闯.beta-FeSi_2半导体薄膜与SI基体取向关系的研究[J],材料热处理学报,2002,23(3):59-64
[433]李晓娜, 聂冬, 董闯.碳掺杂beta-FeSi_2薄膜的电子显微学研究[J],电子显微学报,2002,21(1):43-51
[434]李晓娜, 聂冬, 董闯, Li, X., Lab. for Mat. Modification, Dept. of Mat. Eng., Dalian Univ. of Technol., Dalian 116024, China.beta-FeSi_2和beta-Fe(C,Si)_2薄膜的电子显微及X射线衍射研究[J],真空科学与技术学报,2002,22(5):349-356
[435]李晓娜, 聂冬, 董闯.β-FeSi2和β-Fe(C,Si)2薄膜的电子显微及X射线衍射研究[J],真空科学与技术学报,2002,22(5):349-356
[436]李晓娜, 聂冬, 董闯, 马腾才, 金星, 张泽, Li, XN (reprint author), Dalian Univ Technol, Dept Mat Engn, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China..离子注入合成β-FeSi2薄膜的显微结构[J],物理学报,2002,51(1):115-124
[437]聂冬, 李晓娜, 董闯.β-FeSi2半导体薄膜与Si基体取向关系的研究[J],材料热处理学报,2002,23(3):59-64
[438]Li X.-N., Nie D., Dong C., Ma T.-C., Jin X., Zhang Z., Li, X.-N., Stt. Key Lab. Mat. Modification L., Department of Materials Engineering, Dalian University of Technology, Dalian 116024, China.Microstructure of -FeSi2 film synthesized by ion implantation[J],Wuli Xuebao/Acta Physica Sinica,2002,51(1):123-124
[439]陈伟荣, 王英敏, 羌建兵, 董闯.吸铸法制备ZR-Al-Ni-CU-MO大块非晶合金[J],热加工工艺,2001,0(6):25-26
[440]李晓娜, 聂冬, 董闯, 徐雷, 张泽, Li, X.-N..C掺杂对离子注入合成β-FeSi2薄膜的影响[J],半导体学报,2001,22(12):1507-1515

total463 44/47

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