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论文类型：期刊论文

发表时间：2018-12-01

发表刊物：MICROMACHINES

收录刊物：SCIE、PubMed、Scopus

卷号：9

期号：12

ISSN号：2072-666X

关键字：threshold voltage (V-th) stability; gallium nitride (GaN); high electron mobility transistors (HEMTs); analytical model; high-temperature operation

摘要：Temperature-dependent threshold voltage (V-th) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The V-th analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameterssuch as barrier height, conduction band, and polarization chargewere analysed to understand the mechanism of V-th stability. The V-th analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on V-th stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the V-th stability of power devices in practical, high-temperature applications.