黄火林
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教授
博士生导师
硕士生导师
- 性别：男
- 毕业院校：厦门大学
- 学位：博士
- 所在单位：光电工程与仪器科学学院
- 学科：测试计量技术及仪器. 光学工程. 微电子学与固体电子学
- 办公地点：大连理工大学 厚望楼 414室
- 联系方式：bc90b1565b784bc4efe5c13fbb771ecfd61b194bd14cfb0886125af0bed4b1da7c5ed49fe8c5a4eeaa1cf2f4b3ef6a8a7ff8d8ab6b52f7899175b835436870ffa6600b78b3cc9c33e931ffc896b7fa11f6d30f1fdd15424721281ca8d1ac34527f9114748d810bf89ea768acf8ff539661831cdcb4510aaf331dce4c3105cdae
- 电子邮箱：bc90b1565b784bc4efe5c13fbb771ecfd61b194bd14cfb0886125af0bed4b1da7c5ed49fe8c5a4eeaa1cf2f4b3ef6a8a7ff8d8ab6b52f7899175b835436870ffa6600b78b3cc9c33e931ffc896b7fa11f6d30f1fdd15424721281ca8d1ac34527f9114748d810bf89ea768acf8ff539661831cdcb4510aaf331dce4c3105cdae
访问量：
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[1]黄火林.张卉,曹亚庆,刘艳红,马凯鸣,刘琨,Yung C. Liang.High-temperature three-dimensional GaN-based hall sensors for magnetic field detection[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(7):75003-
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[2]孙仲豪.黄火林,王荣华,刘艳红,孙楠,李飞雨,陶鹏程,任永硕等.Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(2):25109-
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[3]孙仲豪.黄火林,刘艳红,尹伊安,覃开蓉,陶鹏程,刘琨,孙楠,Yung C. Liang.A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(1):299-306
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[4]Zeng, Ni.Yin, Yi'an,Li, Kai,Liao, Fengbo,黄火林.Polarization doping modulated heterojunction electron gas in AlGaN/GaN CAVETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,35(9)
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[5]Huang, Huolin.Huang, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China..Zhang, Feng,Li, Feiyu,Cao, Yaqing,Cai, Yong,Zhang, Baoshun,Sun, Zhonghao.Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2019,108:197-201
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[6]Huang, Huolin.Huang, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China.; Huang, HL (reprint author), Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian 116024, Peoples R China..Li, Feiyu,Sun, Zhonghao,Cao, Yaqing.Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices[J],MICROMACHINES,2018,9(12)
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[7]Huang, Huolin.Huang, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China.; Huang, HL (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Zhang, Zifeng,Liang, Yung C.,Hu, Lizhong,Li, Feiyu,Zhang, Feng,Wen, Zhengxin,Sun, Zhonghao,Cao, Yaqing.Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(34)
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[8]Liu, Jianxun.Liang, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Luo, Yingmin,Abbas, Qasim,Huang, Huolin,Shen, Rensheng,Liu, Yang,Xia, Xiaochuan,Du, Guotong,Liang, Hongwei,Zheng, Xiantong.Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
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[9]Liu, Jianxun.Liang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Sandhu, Qasim Abbas,Shen, Rensheng,Luo, Yingmin,Huang, Huolin,Tao, Pengcheng,Liang, Hongwei,Liu, Yang,Xia, Xiaochuan,Du, Guotong.Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
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[10]Huang, H..Du, G.,Hu, L.,Liang, Y.C.,Liang, H.,Bian, J.,Sun, Z.,Zhang, Z.,Shen, R..Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN area under the recessed gate[A],2017:1230-1232