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黄火林
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教授
博士生导师
硕士生导师
- 性别：男
- 毕业院校：厦门大学
- 学位：博士
- 所在单位：光电工程与仪器科学学院
- 学科：测试计量技术及仪器. 光学工程. 微电子学与固体电子学
- 办公地点：大连理工大学 研教楼 724室
- 电子邮箱：hlhuang@dlut.edu.cn
访问量：
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[1] 黄火林, 张卉, 曹亚庆, 刘艳红, 马凯鸣, 刘琨, Yung C. Liang.High-temperature three-dimensional GaN-based hall sensors for magnetic field detection[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(7):75003-
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[2] 孙仲豪, 黄火林, 王荣华, 刘艳红, 孙楠, 李飞雨, 陶鹏程, 任永硕等.Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-eff[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(2):25109-
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[3] 孙仲豪, 黄火林, 刘艳红, 尹伊安, 覃开蓉, 陶鹏程, 刘琨, 孙楠, Yung C. Liang.A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental V[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(1):299-306
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[4] Zeng, Ni, Yin, Yi'an, Li, Kai, Liao, Fengbo, 黄火林.Polarization doping modulated heterojunction electron gas in AlGaN/GaN CAVETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,35(9)
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[5] Huang, Huolin, Sun, Zhonghao, Zhang, Feng, Li, Feiyu, Cao, Yaqing, Cai, Yong, Baoshun, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China..Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a n[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2019,108:197-201
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[6] Huang, Huolin, Li, Feiyu, Sun, Zhonghao, Cao, Yaqing, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China., Huang, Key Lab Micro Nano Technol & Syst Liaoning Prov.Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide[J],MICROMACHINES,2018,9(12)
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[7] Huang, Huolin, Sun, Zhonghao, Cao, Yaqing, Li, Feiyu, Zhang, Feng, Wen, Zhengxin, Zifeng, Liang, Yung C., Hu, Lizhong, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China., Huang, Sch Microelect.Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobi[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(34)
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[8] Liu, Jianxun, Du, Guotong, Liang, Hongwei, Zheng, Xiantong, Yang, Xia, Xiaochuan, Abbas, Qasim, Huang, Huolin, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterost[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
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[9] Liu, Jianxun, Du, Guotong, Liang, Hongwei, Yang, Xia, Xiaochuan, Huang, Huolin, Tao, Pengcheng, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
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[10] Huang, H., Sun, Z., Zhang, Shen, R., Liang, Y.C., Bian, J., Du, G., Hu, L..Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN[A],2017,1230-1232
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[11] Sun, Z., Huang, H., Shen, R., Zhang, Liang, Y.C., Hu, L..Improved on-resistance and breakdown voltage vertical GaN-based field effect transistors[A],2017,1101-1103
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[12] Liu, Jianxun, Du, Guotong, Liang, Hongwei, Li, Binghui, Yang, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC ADVANCES,2016,6(65):60068-60073
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[13] Huang, Huolin, Liang, Yung Chii, HL (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structure[J],SOLID-STATE ELECTRONICS,2015,114:148-154
