黄火林
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教授
博士生导师
硕士生导师
- 性别:男
- 毕业院校:厦门大学
- 学位:博士
- 所在单位:光电工程与仪器科学学院
- 学科:测试计量技术及仪器. 光学工程. 微电子学与固体电子学
- 办公地点:大连理工大学 研教楼 724室
- 电子邮箱:hlhuang@dlut.edu.cn
访问量:
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黄火林, 张卉, 曹亚庆, 刘艳红, 马凯鸣, 刘琨, Yung C. Liang.High-temperature three-dimensional GaN-based hall sensors for magnetic field detection[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(7):75003-
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孙仲豪, 黄火林, 王荣华, 刘艳红, 孙楠, 李飞雨, 陶鹏程, 任永硕等.Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(2):25109-
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孙仲豪, 黄火林, 刘艳红, 尹伊安, 覃开蓉, 陶鹏程, 刘琨, 孙楠, Yung C. Liang.A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(1):299-306
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Zeng, Ni, Yin, Yi'an, Li, Kai, Liao, Fengbo, 黄火林.Polarization doping modulated heterojunction electron gas in AlGaN/GaN CAVETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,35(9)
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Huang, Huolin, Sun, Zhonghao, Zhang, Feng, Li, Feiyu, Cao, Yaqing, Cai, Yong, Baoshun, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China..Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2019,108:197-201
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Huang, Huolin, Li, Feiyu, Sun, Zhonghao, Cao, Yaqing, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China., Huang, Key Lab Micro Nano Technol & Syst Liaoning Prov.Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices[J],MICROMACHINES,2018,9(12)
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6英寸硅基氮化镓增强型功率器件技术研发, 省、市、自治区科技项目, 2021/02/22-2023/09/13, 结题
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氮化镓材料功率器件新结构与关键工艺技术研究, 省、市、自治区科技项目, 2019/07/01, 在研
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氮化镓自支撑衬底大功率垂直结构场效应晶体管基础技术研究, 国家自然科学基金项目, 2019/08/16-2024/03/26, 结题
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高精度光声光谱检测仪研制及应用示范, 企事业单位委托科技项目, 2019/06/10, 在研
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基于纵向短栅极沟道结构的低导通电阻常关型GaN基HEMT器件制备研究, 国家自然科学基金项目, 2016/08/17, 结题
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多重2DEG沟道和凹槽栅组合GaN MOS-HEMT器件的研制, 其他课题, 2016/06/13-2023/07/15, 结题