黄火林

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教授
博士生导师
硕士生导师
- 性别:男
- 毕业院校:厦门大学
- 学位:博士
- 所在单位:光电工程与仪器科学学院
- 学科:测试计量技术及仪器. 光学工程. 微电子学与固体电子学
- 办公地点:大连理工大学 厚望楼 414室
- 联系方式:bc90b1565b784bc4efe5c13fbb771ecfd61b194bd14cfb0886125af0bed4b1da7c5ed49fe8c5a4eeaa1cf2f4b3ef6a8a7ff8d8ab6b52f7899175b835436870ffa6600b78b3cc9c33e931ffc896b7fa11f6d30f1fdd15424721281ca8d1ac34527f9114748d810bf89ea768acf8ff539661831cdcb4510aaf331dce4c3105cdae
- 电子邮箱:bc90b1565b784bc4efe5c13fbb771ecfd61b194bd14cfb0886125af0bed4b1da7c5ed49fe8c5a4eeaa1cf2f4b3ef6a8a7ff8d8ab6b52f7899175b835436870ffa6600b78b3cc9c33e931ffc896b7fa11f6d30f1fdd15424721281ca8d1ac34527f9114748d810bf89ea768acf8ff539661831cdcb4510aaf331dce4c3105cdae
访问量:
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黄火林.张卉,曹亚庆,刘艳红,马凯鸣,刘琨,Yung C. Liang.High-temperature three-dimensional GaN-based hall sensors for magnetic field detection[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(7):75003-
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孙仲豪.黄火林,王荣华,刘艳红,孙楠,李飞雨,陶鹏程,任永硕等.Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(2):25109-
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孙仲豪.黄火林,刘艳红,尹伊安,覃开蓉,陶鹏程,刘琨,孙楠,Yung C. Liang.A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(1):299-306
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Zeng, Ni.Yin, Yi'an,Li, Kai,Liao, Fengbo,黄火林.Polarization doping modulated heterojunction electron gas in AlGaN/GaN CAVETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,35(9)
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Huang, Huolin.Huang, HL (reprint author), Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China..Zhang, Feng,Li, Feiyu,Cao, Yaqing,Cai, Yong,Zhang, Baoshun,Sun, Zhonghao.Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2019,108:197-201
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6英寸硅基氮化镓增强型功率器件技术研发,省、市、自治区科技项目,2021-02-22,2023-09-13,结题
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氮化镓材料功率器件新结构与关键工艺技术研究,省、市、自治区科技项目,2019-07-01,已提已提交结题报告
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氮化镓自支撑衬底大功率垂直结构场效应晶体管基础技术研究,国家自然科学基金项目,2019-08-16,2024-03-26,结题
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高精度光声光谱检测仪研制及应用示范,企事业单位委托科技项目,2019-06-10,在研
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基于纵向短栅极沟道结构的低导通电阻常关型GaN基HEMT器件制备研究,国家自然科学基金项目,2016-08-17,结题