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论文类型：期刊论文

发表时间：2016-08-01

发表刊物：CARBON

收录刊物：SCIE、EI、Scopus

卷号：105

页面范围：566-571

ISSN号：0008-6223

摘要：The newly emerging graphene/hexagonal boron nitride (h-BN) van der Waals heterostructures has attracted much research interest due to its new properties and functions for practical applications in nanodevices. In this work, molecular dynamics simulations are performed to study the interfacial thermal resistance (ITR) of a graphene/h-BN bilayer system as well as its one-dimensional counterpart, a concentric CNT/BNNT double-walled nanotube, based on the lumped capacity model. The calculated ITR is in an order of magnitude of 10(-7)-10(-6) Km(2)/W and it monotonically decreases with temperature and interlayer/intertube coupling strength. It is believed that the ITR between graphene and h-BN is reduced through the enhancement of the coupling strength instead of the geometrical overlap of the phonon modes. Heat flux direction has no effect on the ITR of the graphene/h-BN bilayer, however, radial thermal rectification is found in the CNT/BNNT composite, with a largest thermal rectification factor of similar to 90%. Thermal energy always prefers to transport from the outer nanotube towards the inner nanotube in the CNT/BNNT system over the opposite direction no matter the outer nanotube is CNT or BNNT because the outer nanotube has more high-frequency phonons than that of the inner nanotube in the CNT/BNNT system. (C) 2016 Elsevier Ltd. All rights reserved.