Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer
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发表时间:2022-10-03
发表刊物:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS
卷号:24
期号:8
页面范围:2923-2927
ISSN号:0957-4522
点击次数:
发表时间:2022-10-03
发表刊物:JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS
卷号:24
期号:8
页面范围:2923-2927
ISSN号:0957-4522