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论文类型：期刊论文

发表时间：2013-02-13

发表刊物：JOURNAL OF PHYSICS D-APPLIED PHYSICS

收录刊物：SCIE、EI、Scopus

卷号：46

期号：6

ISSN号：0022-3727

摘要：n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs) with a polarization-induced graded-p-AlxGa1-xN electron-blocking layer (PIEBL) were fabricated. Compared with n-ZnO/p-GaN and n-ZnO/p-Al0.4Ga0.6N/p-GaN LEDs, the PIEBL can effectively block electron injection from ZnO to GaN and promote hole injection from GaN to ZnO. A dominant ZnO-related ultraviolet emission was observed from the edge emission of this device. The mechanism of PIEBL was also discussed in terms of polarization and energy band theory. This study suggests that PIEBL is an excellent electron-blocking layer for ZnO-based LEDs and laser diodes.