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论文类型：期刊论文

发表时间：2012-02-01

发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物：EI、SCIE

卷号：23

期号：2

页面范围：542-545

ISSN号：0957-4522

摘要：Ga2O3 thin films were deposited on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition. The influence of annealing in N-2 atmosphere at the temperature in the range of 800-1,000 A degrees C was investigated by X-ray diffraction and optical transmittance spectra. With an increase of annealing temperature from 800 to 950 A degrees C, the transformation from the initial amorphous film to polycrystalline beta-Ga2O3 thin film was observed, and the transmittance was also improved remarkably. The optical band gap energy of the sample annealed at 950 A degrees C was evaluated as similar to 5 eV. Whereas, after an annealing at 1,000 A degrees C, the crystal quality became worse and the transmittance degraded. The mechanism of annealing in N-2 atmosphere was discussed in view of phase transition.