• 更多栏目

    秦福文

    • 副教授       硕士生导师
    • 性别:男
    • 毕业院校:大连理工大学
    • 学位:博士
    • 所在单位:物理学院
    • 学科:凝聚态物理
    • 办公地点:科技园c座303-2
    • 联系方式:qfw@dlut.edu.cn
    • 电子邮箱:qfw@dlut.edu.cn

    访问量:

    开通时间:..

    最后更新时间:..

    Bias effects on AlMgB thin films prepared by magnetron sputtering

    点击次数:

    论文类型:期刊论文

    发表时间:2017-08-03

    发表刊物:SURFACE ENGINEERING

    收录刊物:SCIE、EI、Scopus

    卷号:33

    期号:8

    页面范围:592-596

    ISSN号:0267-0844

    关键字:AlMgB thin films; Magnetron sputtering; Negative bias voltage; Thickness; Hardness

    摘要:AlMgB thin filmswere deposited on silicon (100) substrate using a three- target magnetron sputtering system in argon atmosphere. The influence of negative bias voltage on the thickness, morphology, microstructure, local bonding and hardness of the deposited films was investigated. Experimental results show that all films are X-ray amorphous, and the properties of the deposited films have a strong dependence on the applied substrate's negative bias voltage. Deposited at high negative bias voltage, the AlMgB thin films are found to be generally dense, having a smooth surface and containing more well-formed B-12 icosahedra, which consequently increase the hardness of the deposited films. However, deposited at low negative bias voltage, the AlMgB thin films exhibit loose structure, coarse surface and contain few B12 icosahedra. It is shown that the hardness of the dense and smooth AlMgB thin films can reach 22 GPa at the negative bias voltage of 400 V.