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论文类型：期刊论文

发表时间：2016-02-28

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：SCIE、EI、Scopus

卷号：364

页面范围：769-774

ISSN号：0169-4332

关键字：SiC semiconductor; SiO2/SiC interface; Density of interface traps; Surface pretreatment; Surface states

摘要：We proposed an electron cyclotron resonance microwave hydrogen-nitrogen mixed plasma (HNP) pretreatment for 4H-SiC surface combined with post-oxidation annealing (POA) to improve the SiO2/SiC interface properties. Results revealed that HNP surface pretreatment effectively reduced the density of interface traps (D-it), which was closely correlated with interface flattening because of surface flattening, surface state (contaminants, adsorbates, and dangling bonds) reduction, and suppressed generation of interface defects during oxidation. Combined with POA, D-it was further decreased because of passivation of the formed defects after oxidation. The correlation among passivation, SiC surface properties, SiO2/SiC interface properties, and defect levels was established. (C) 2015 Elsevier B.V. All rights reserved.