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论文类型：期刊论文

发表时间：2014-05-19

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：104

期号：20

ISSN号：0003-6951

摘要：We propose a low-temperature electron cyclotron resonance microwave hydrogen-nitrogen mixed plasma treatment method for passivating 4H-SiC surface and investigate the effects of treatment on the structural, chemical, and electronic properties of the surface. The results indicate that the method is highly controllable and could result in an atomically ordered, unreconstructed, smooth, and clean SiC surface. The absence of surface band bending is indicative of an electronically passivated SiC surface with a surface state density as low as 5.47 x 10(10) cm(-2). This effect could be attributed to the simultaneous effects of H and N passivating on SiC surface. (C) 2014 AIP Publishing LLC.