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论文类型：期刊论文

发表时间：2014-02-01

发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物：SCIE、EI、Scopus

卷号：25

期号：2,SI

页面范围：969-973

ISSN号：0957-4522

摘要：A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of gallium nitride (GaN) films on ordinary soda-lime glass substrates with sputtered Cu as intermediate layer (Cu/glass substrates). The influence of deposition temperature on the properties of the GaN films on Cu/glass substrates was systematically investigated by means of In-situ reflection high energy electron diffraction, X-ray diffraction, atomic force microscopy and photoluminescence spectra. With this method, high c-orientated crystalline GaN films with relatively smooth surface were achieved on amorphous Cu/glass substrate at an extremely low temperature of similar to 400 A degrees C. The successfully growth of crystalline GaN films on amorphous Cu/glass substrates show great potential for significant improvements in the scalability and cost of GaN based devices, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique.