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论文类型：期刊论文

发表时间：2014-01-15

发表刊物：JOURNAL OF ALLOYS AND COMPOUNDS

收录刊物：SCIE、EI

卷号：583

页面范围：39-42

ISSN号：0925-8388

关键字：Gallium nitride (GaN); Glass substrate; Plasma-enhanced metal organic chemical; vapor deposition system (ECR-PEMOCVD); Low temperature growth

摘要：A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crystalline GaN films with atomically smooth surface were achieved on amorphous Ni/glass substrate at an extremely low temperature of similar to 480 degrees C. This GaN/Ni/glass structures have great potential for dramatically improve the scalability and cost of solid-state lighting, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique. (C) 2013 Elsevier B. V. All rights reserved.