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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2014-01-01

发表刊物：PHYSICA B-CONDENSED MATTER

收录刊物：EI、SCIE

卷号：432

页面范围：89-95

ISSN号：0921-4526

关键字：SiC; SiO2/SiC interface; Electron cyclotron resonance microwave; nitrogen plasma post-oxidation annealing; Density of interface traps; Secondary ion mass spectrometry; X-ray photoelectron spectroscopy

摘要：An electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing process was Proposed to passivate the 4H-SiC MOS interface. The effects of this process on the electrical and physical properties of SiC MOS interface were investigated by current-voltage, capacitance-voltage, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy measurements. By controlling the annealing period, this process could significantly reduce the density of interface traps (D-u) in the entire upper half of SIC band gap without degrading the oxide insulating properties. A 10-mm annealing at 600 degrees C produces the best result. The incorporated nitrogen, which is distributed throughout bulk SiO2 and SiO2/SiC interface, could reduce the content of SiOxCy and carbon clusters by forming some deep-level Si-N and C-N bonds. These results illustrate the physical modifications of SiC MOS interface induced by this process and explain the possible mechanism responsible for the observed reduction in D-it in different energy ranges. (C) 2013 Elsevier B.V. All rights reserved.