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论文类型：期刊论文

发表时间：2013-12-01

发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物：SCIE、EI、Scopus

卷号：24

期号：12

页面范围：5069-5074

ISSN号：0957-4522

摘要：Gallium nitride (GaN) films were deposited on Ni metal substrate using electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system. With this approach, highly c-oriented GaN films with smooth surface were obtained at an extremely low temperature of similar to 480 A degrees C. The trimethyl gallium (TMGa) flux dependent structural, morphological, and optical characteristics of GaN films were investigated by X-ray diffraction analysis, reflection high energy electron diffraction, atomic force microscopy and photoluminescence analysis. The results indicate that it is feasible to deposit GaN films on Ni metal substrate under the proper deposition procedures. The high quality GaN films with high c-axis orientation and strong ultraviolet emission peak are successfully achieved under the optimized TMGa flux of 1.2 sccm. The GaN/Ni structure has great potential for the development of high power devices with excellent heat dissipation.