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论文类型：期刊论文

发表时间：2012-07-30

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：SCIE、EI、Scopus

卷号：101

期号：5

ISSN号：0003-6951

摘要：ZnO-based graphite-insulator-semiconductor (GIS) diode was fabricated on the high thermal and electrical conductive graphite substrate, with a SiO2 thin layer employed as the insulator layer. The current-voltage characteristics exhibit an excellent rectifying diode-like behavior with an obvious turn on voltage of 2.0 V and rather low leakage current of similar to 10(-4) A. An interesting negative capacitance phenomenon was also observed from the GIS diode. The excellent heat dissipation performance of the GIS diode compared with conventional sapphire based devices was experimentally demonstrated, which was of special interest for the development of high-power semiconductor devices with sufficient power durability. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742150]