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论文类型：期刊论文

发表时间：2011-10-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：Scopus、SCIE、ISTIC

卷号：28

期号：10

ISSN号：0256-307X

摘要：We investigate the structural property and surface morphology of InxGa1-xN films for In compositions ranging from 0.06 to 0.58, which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The results of x-ray diffraction (XRD) in InGaN films confirm that they have excellent c-axis orientation. The In content in the InGaN epilayers is checked by electron probe microanalysis (EPMA), which reveals that In fractions determined by XRD are in good agreement with the EPMA results. Atomic force microscopy measurements reveal that the grown films have a surface roughness that varies between 4.16 and 8.14 nm. The results suggest that it is possible to deposit high-c-axis-orientation InGaN films with different In contents.