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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2011-10-01

发表刊物：MATERIALS RESEARCH BULLETIN

收录刊物：EI、SCIE、Scopus

卷号：46

期号：10

页面范围：1582-1585

ISSN号：0025-5408

关键字：Semiconductors

摘要：GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N(2) are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 degrees C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature. (C) 2011 Elsevier Ltd. All rights reserved.