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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2011-02-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：ISTIC、SCIE、Scopus

卷号：28

期号：2

ISSN号：0256-307X

摘要：Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and Hall effect measurement. The quality of the as-grown InN films is markedly improved at the optimized N-2 flux of 100 sccm. The results show that the properties of the films are strongly dependent on N-2 flux.