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论文类型：期刊论文

发表时间：2022-06-30

发表刊物：物理学报

卷号：55

期号：3

页面范围：1363-1368

ISSN号：1000-3290

摘要：Hydrogen-free silicon nitride films were deposited at room temperature by microwave electron cyclotron resonance (ECR) plasma source enhanced unbalanced magnetron sputtering system. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to study the bond type, the change of bond structures, and the stoichiometry of the silicon nitride films. Atomic-force microscopy and nano-indentation were used to study the morphological features and mechanical characteristics of the films. The results indicate that the structure and characteristics of the films deposited by this technique depend strongly on the density of sputtered Si in plasma and the films deposited at 4 seem N-2 flow show excellent stoichiometry and properties.

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