骆英民

个人信息Personal Information

工程师

性别：男

毕业院校：大连理工大学

学位：博士

所在单位：集成电路学院

学科：微电子学与固体电子学

办公地点：开发区校区教学楼C区505

联系方式：0411-62273207

电子邮箱：ymluo@dlut.edu.cn

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[21]Wang, Minhuan, Fan, Lele, Bian, Jiming, Zhang, Dong, Liu, Hongzhu, Sun, Hongjun, Luo, Yingmin, JM (reprint author), Dalian Univ Technol, Sch Phys, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China..Room-temperature metal-insulator transition of MBE grown VO2 film investigated by temperature d...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(15):11046-11052
[22]Cheng, Chuan-Hui, Luo, Ying-Min, Du, Guo-Tong, Cong, Shu-Lin, Zhang, Bi-Long, Sun, Chao, Li, Ruo-Xuan, Wang, Yuan, Tian, Wen-Ming, Zhao, Chun-Yi, Jin, Sheng-Ye, Liu, Wei-Feng, CH (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China..Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as ...[J],JOURNAL OF APPLIED PHYSICS,2017,121(23)
[23]Yin, Bing, Qiu, Yu, Zhang, Heqiu, Luo, Yingmin, Zhao, Yang, Dechao, Hu, Lizhong, LZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China., Hu, Key Lab Micro Nano Technol & Syst Liaoning Prov.Improved photoresponse performance of a self-powered Si/ZnO heterojunction ultraviolet and visi...[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2017,32(6)
[24]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Yang, Jun, Abbas, Qasim, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Microelect, Sch Phys, Dalian 116024, Peoples R China..Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Conte...[J],CRYSTAL GROWTH & DESIGN,2017,17(6):3411-3418
[25]孙洪君, 王敏焕, 边继明, 苗丽华, 章俞之, 骆英民, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China., Bian, Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050.MBE技术蓝宝石衬底上生长VO2薄膜及其太赫兹和金属-绝缘体相变特性研究[J],无机材料学报,2017,32(4):437-442
[26]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Huang, Huolin, Tao, Pengcheng, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
[27]张贺秋, 邱宇, 骆英民, 赵宇, 胡礼中.The light-induced pyro-phototronic effect improving a ZnO/NiO/si heterojuction photodetector for ...[J],Nanoscal,2017,9(44):17199-17206
[28]Wang, Minhuan, Bian, Jiming, Sun, Hongjun, Liu, Weifeng, Zhang, Yuzhi, Luo, Yingmin, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China..n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MB...[J],APPLIED SURFACE SCIENCE,2016,389:199-204
[29]Wang, Minhuan, Shi, Yantao, Bian, Jiming, Dong, Qingshun, Sun, Hongjun, Liu, Hongzhu, Luo, Yingmin, Zhang, Yuzhi, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China..Electroluminescence from perovskite LEDs with the structure of Ag/Spiro-OMeTAD/CH3NH3PbI3/TiO2/...[J],CHEMICAL PHYSICS LETTERS,2016,662:176-181
[30]Wang, Minhuan, Bian, Jiming, Sun, Hongjun, Liu, Hongzhu, Li, Xiaoxuan, Luo, Yingmin, Huang, Huolin, Zhang, Yuzhi, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China., Bian, Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050.Sunlight-induced resistance changes and their effects on the semiconductor-metal transition beh...[J],JOURNAL OF MATERIALS SCIENCE,2016,51(17):8233-8239
[31]Bian, Jiming, Wang, Minhuan, Sun, Hongjun, Liu, Hongzhu, Li, Xiaoxuan, Luo, Yingmin, Zhang, Yuzhi, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Materials Modificat Laser Ion & Elect Bea, Minist Educ, Dalian 116024, Peoples R China., Bian, Chinese Acad Sci, Key Lab Inorgan Coating Materials, Shanghai 200050.Thickness-modulated metal-insulator transition of VO2 film grown on sapphire substrate by MBE[J],JOURNAL OF MATERIALS SCIENCE,2016,51(13):6149-6155
[32]Li, Xiaoxuan, Qin, Fuwen, Luo, Yingmin, Zhang, Yuzhi, Liu, Hongzhu, Miao, Lihua, Wang, Minhuan, Bian, Jiming, JM (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure[J],MATERIALS RESEARCH BULLETIN,2016,77:199-204
[33]Chang, Yue, Yin, Bing, Qiu, Yu, Zhang, Heqiu, Lei, Jixue, Zhao, Luo, Yingmin, Hu, Lizhong, LZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China., Hu, Key Lab Micro Nano Technol & Syst Liaoning Prov.ZnO nanorods array/BaTiO3 coating layer composite structure nanogenerator[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(4):3773-3777
[34]Liang, Hongwei, Du, Guotong, Tao, Pengcheng, Xia, Xiaochuan, Chen, Yuanpeng, Zhang, Kexiong, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(3)
[35]Yin, Bing, Zhang, Heqiu, Qiu, Yu, Chang, Yue, Lei, Jixue, Yang, Dechao, Luo, Yingmin, Zhao, Hu, Lizhong, LZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Piezo-phototronic effect enhanced pressure sensor based on ZnO/NiO core/shell nanorods array[J],NANO ENERGY,2016,21:106-114
[36]Luo, Yingmin, Yin, Bing, Zhang, Heqiu, Qui, Yu, Lei, Jixue, Chang, Yue, Zhao, Ji, Jiuyu, Hu, Lizhong, LZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China., Hu, Key Lab Micro Nano Technol & Syst Liaoning Prov.Fabrication of p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors via thermal ox...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(3):2342-2348
[37]Lei, Jixue, Yin, Bing, Qiu, Yu, Zhang, Heqiu, Chang, Yue, Luo, Yingmin, Zhao, Ji, Jiuyu, Hu, Lizhong, LZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China., Hu, Key Lab Micro Nano Technol & Syst Liaoning Prov.Fabrication of flexible nanogenerator with enhanced performance based on p-CuO/n-ZnO heterostru...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(2):1983-1987
[38]Luo, Yingmin, Yin, Bing, Zhang, Heqiu, Zhao, Yu, Ji, Jiuyu, Hu, Lizhong, Qiu, Lei, Jixue, Chang, Yue, LZ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Piezoelectric effect enhancing decay time of p-NiO/n-ZnO ultraviolet photodetector[J],APPLIED SURFACE SCIENCE,2016,361:157-161
[39]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Li, Binghui, Yang, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC ADVANCES,2016,6(65):60068-60073
[40]Tao, Pengcheng, Luo, Yingmin, Zhang, Yuantao, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Chen, Yuanpeng, Yang, Chao, Liu, Jianxun, Zhu, Zhifu, Yang, Shen, Rensheng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,41:291-296

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