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发布时间：2019-03-12

论文类型：期刊论文

发表时间：2018-08-01

发表刊物：ACTA MATERIALIA

收录刊物：SCIE

卷号：154

页面范围：190-198

ISSN号：1359-6454

关键字：Hafnium oxide; Ferroelectric; Antiferroelectric; Endurance; Phase transition

摘要：Hafnium oxide based ferroelectric (FE) and antiferroelectric (AFE) thin films show great potentials in memory and energy related applications, while their successes in commercially available devices depend strongly on detailed characterization and deep understanding of the endurance properties of the materials. In this work, the bipolar field cycling behavior has been investigated in detail for FE and AFE-like Si-doped HfO2 films. Their apparent differences in fatigue and breakdown resistance are interpreted by the modified switching-induced charge-injection model. Referring to the first-order phase transition theory, we summarize and predict the evolution of polarization switching characteristic for FE, AFE-like and AFE Si-doped HfO2 thin films stressed with bipolar field cycling. Additionally, several approaches are suggested to improve the endurance properties of ferroelectric HfO2-based thin films in terms of fabrication process and material design. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.