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发布时间：2019-03-11

论文类型：期刊论文

发表时间：2017-10-14

发表刊物：JOURNAL OF APPLIED PHYSICS

收录刊物：EI、SCIE、Scopus

卷号：122

期号：14

ISSN号：0021-8979

摘要：Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm(3) is achieved at 4.5 MV/cm with a high efficiency of similar to 65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400K temperature range and an excellent endurance up to 10 9 times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3 in fabrication of nano-structural supercapacitors. Published by AIP Publishing.