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论文类型：期刊论文

发表时间：2015-10-01

发表刊物：PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

收录刊物：SCIE、EI、Scopus

卷号：9

期号：10

页面范围：589-593

ISSN号：1862-6254

关键字：Si-doped HfO2; thin films; Rayleigh law; ferroelectric materials

摘要：A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO2 thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO2 thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim