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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：德国卡尔斯鲁厄工业大学
学位：博士
所在单位：材料科学与工程学院
学科：材料物理与化学. 微电子学与固体电子学
办公地点：辽宁省大连市高新园区凌工路2号
大连理工大学新三束实验室412
电子邮箱：zhoudayu@dlut.edu.cn
Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
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论文类型：期刊论文
发表时间：2015-10-15
发表刊物：ACTA MATERIALIA
收录刊物：SCIE、EI、Scopus
卷号：99
页面范围：240-246
ISSN号：1359-6454
关键字：Hafnium oxide; Ferroelectric; Domain switching; Temperature dependence; Endurance
摘要：HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E(c)), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E(c)), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.