论文成果
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
- 点击次数：
- 论文类型：期刊论文
- 发表时间：2013-11-04
- 发表刊物：APPLIED PHYSICS LETTERS
- 收录刊物：SCIE、EI、Scopus
- 文献类型：J
- 卷号：103
- 期号：19
- ISSN号：0003-6951
- 摘要：Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up. (C) 2013 AIP Publishing LLC.
