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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2013-11-04

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：Scopus、EI、SCIE

卷号：103

期号：19

ISSN号：0003-6951

摘要：Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up. (C) 2013 AIP Publishing LLC.