点击次数：

发布时间：2019-03-09

论文类型：期刊论文

发表时间：2010-12-15

发表刊物：JOURNAL OF APPLIED PHYSICS

收录刊物：Scopus、EI、SCIE

卷号：108

期号：12

ISSN号：0021-8979

摘要：In this paper, we report reliability evaluation results for nanomixed amorphous ZrAlxOy and symmetrically or asymmetrically stacked ZrO2/Al2O3/ZrO2 dielectric thin films grown by atomic layer deposition method in cylindrical metal-insulator-metal capacitor structure. Clear distinctions between their I-V asymmetry and breakdown behavior were correlated with the differences in compositional modification of bottom interface, defect density, and conduction mechanism of the film stacks. The thermochemical molecular bond breakage model was found to explain the dielectric constant dependent breakdown field strength and electric field acceleration parameter of lifetime very well. (C) 2010 American Institute of Physics. [doi:10.1063/1.3520666]