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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：德国卡尔斯鲁厄工业大学
学位：博士
所在单位：材料科学与工程学院
学科：材料物理与化学. 微电子学与固体电子学
办公地点：辽宁省大连市高新园区凌工路2号
大连理工大学新三束实验室412
电子邮箱：zhoudayu@dlut.edu.cn
Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
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论文类型：期刊论文
发表时间：2010-12-15
发表刊物：JOURNAL OF APPLIED PHYSICS
收录刊物：SCIE、EI、Scopus
卷号：108
期号：12
ISSN号：0021-8979
摘要：In this paper, we report reliability evaluation results for nanomixed amorphous ZrAlxOy and symmetrically or asymmetrically stacked ZrO2/Al2O3/ZrO2 dielectric thin films grown by atomic layer deposition method in cylindrical metal-insulator-metal capacitor structure. Clear distinctions between their I-V asymmetry and breakdown behavior were correlated with the differences in compositional modification of bottom interface, defect density, and conduction mechanism of the film stacks. The thermochemical molecular bond breakage model was found to explain the dielectric constant dependent breakdown field strength and electric field acceleration parameter of lifetime very well. (C) 2010 American Institute of Physics. [doi:10.1063/1.3520666]