赵宁

Professor   Supervisor of Doctorate Candidates   Supervisor of Master's Candidates

Main positions:材料科学与工程学院副院长

Gender:Male

Alma Mater:Dalian University of Technology

Degree:Doctoral Degree

School/Department:School of Materials Science and Engineering

Discipline:Materials Science

E-Mail:zhaoning@dlut.edu.cn


Paper Publications

Mechanism of Cu6Sn5 layer act as a diffusion barrier layer

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Indexed by:会议论文

Date of Publication:2013-08-11

Included Journals:EI、CPCI-S、Scopus

Page Number:1086-1089

Key Words:diffusion barrier layer; Cu6Sn5; interfacial intermetallic compounds; lead-free solder; aging

Abstract:Interfacial intermetallic compound (IMC) is a important factor for the reliability of soldering joints. Too thick intermetallic compounds layer will reduce the reliability of soldered joints seriously. And stable intermetallic compound Cu6Sn5 phase initially formed at the interface after reflowing is necessary for good quality of soldering joints. In the present study, scallop-like Cu6Sn5 was used as diffusion barrier layer between lead-free solder alloy and cooper substrate. Effect of the diffusion barrier layer for reflowing with several holding time was investigated. In addition, the element diffusion behavior and the change of IMC layer in solid-state isothermal aging process have been analyzed from the perspective of intermetallic compounds layer act as a diffusion barrier layer.
   Results indicate that, 1) The IMC layer initially preparation on cooper substrate act as a diffusion barrier layer between lead-free solder alloys and cooper substrate is feasible. 2) The effect of thinner IMC layer (Average thickness is about 0.87 mu m) is more obvious compared with a thicker IMC layer during reflowing process. 3) The impact of the diffusion barrier layer is remarkable for a shorter time reflowing; 4) Cu6Sn5 layer can effectively restrain elements diffusion in Sn-0.5Cu soldering joints during thermal aging progress, but not in pure Sn soldering joints.

Pre One:Dissolution and Precipitation of Ag3Sn Plates in Ultra Fine Solder Joints Using Synchrotron Radiation Real-time Imaging Technology

Next One:Drop Failure Modes of A Wafer-Level Chip-Scale Packaging

Profile

赵宁,工学博士,教授,博士生导师,现任材料科学与工程学院副院长。《Scientific Reports》期刊编委,IEEE会员、IEEE-EPS会员,中国电子学会(电子制造与封装技术分会)、中国材料研究学会、中国机械工程学会高级会员。

2003年本科毕业于东北大学材料物理专业,2008年博士毕业于大连理工大学材料学专业。2009年至2011年在中科院微电子研究所系统封装技术研究室从事博士后研究,2011年加入大连理工大学材料学院,同年评为副教授,2017年评为博士生导师,2018年评为教授。2016年至2017年在美国佐治亚理工学院做访问学者,合作学者为美国工程院院士、中国工程院外籍院士C.P. Wong教授。

主要从事电子封装微互连材料与技术的基础理论及应用研究,重点围绕微互连方法与成型机理,微焊点晶粒生长调控、组织演变、热迁移行为与可靠性测试分析,晶圆级互连技术,无铅焊料及BGA焊球开发与组织控制,低电阻率电镀铜膜/线等方面开展深入研究。

主持国家自然科学基金(4项)、省部级科研项目十余项,参与多项国家科技重大专项等项目。在Acta Mater.、Mater. Des.、J. Mater. Sci. Tech.、Appl. Phys. Lett.、Scripta Mater.、J. Mater. Process. Tech.、Sci. Rep.、J. Alloys Compd.、Appl. Surf. Sci.、Mater. Charact.、Intermetallics、Mater. Res. Bull.、J. Appl. Phys.、Mater. Lett.、Mater. Chem. Phys.、J. Mater. Res.、J. Electron. Mater.、物理学报、金属学报、中国有色金属学报(英文版)、稀有金属材料与工程等期刊上发表学术论文100余篇;在ECTC、ICEPT、CSTIC、EPTC等国际学术会议上发表EI论文60余篇,5次获得最佳论文奖;获中国发明专利授权25项。入选辽宁省“百千万人才工程”、大连市高层次人才计划。

指导学生:

在读硕士生11人,博士生6人。

已毕业博士生3、硕士生15人。

指导研究生多次获得国家奖学金、省优秀毕业生、市三好学生、校优秀博士/硕士研究生、优秀学位论文等荣誉。

 

欢迎有意从事微电子制造、微电子封装行业,具有材料、机械、物理、微电子专业背景,勤奋好学、积极乐观的学子们加入本课题组!