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Investigation of temperature-dependent ferroelectric Properties of Y-doped HfO2 thin film prepared by middle-frequency reactive magnetron co-sputtering

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Indexed by:期刊论文

Date of Publication:2021-01-10

Journal:Vacuum

Volume:195

Issue:5

Page Number:109506-109506

Pre One:Development of NiCr/NiSi thin-film thermocouple sensor for workpiece temperature measurement in chemical explosive material machining

Next One:Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO(2 )films formed by reactive sputtering
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