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Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO(2 )films formed by reactive sputtering

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Date of Publication:2022-10-02

Journal:CERAMICS INTERNATIONAL

Volume:44

Issue:11

Page Number:12841-12846

ISSN No.:0272-8842

Pre One:Experimental evidence for ferromagnetism at room temperature in MgO thin films

Next One:Effects of growth temperature on mu c-Si:H films prepared by plasma assistant magnetron sputtering
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