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Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO2 films

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Date of Publication:2022-10-08

Journal:Chinese Physics B

Volume:27

Issue:4

ISSN No.:1674-1056

Pre One:Si过渡层对梯度影响类金刚石薄膜结合力的影响研究

Next One:Studies of diamond-like carbon (DLC) films deposited on stainless steel substrate with Si/SiC intermediate layers
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