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Indexed by:期刊论文

Date of Publication:2022-06-30

Journal:真空科学与技术学报

Volume:36

Issue:10

Page Number:1092-1098

ISSN No.:1002-0322

Abstract:The polycrystalline AlN coatingswere deposited byRF reactive magnetron sputtering on Si (111)substrate.The influence of the pressure of Ar/N2 mixture on the microstructures,contents and deposition rate was investigated with X-ray diffraction (XRD) and Fourier transforminfrared spectroscopy (FTIR).The results show that the pressure has a major impact on the preferential growth orientation of the polycrystalline AlN coatings.To be specific,as the pressure increased from below 0.6 to 1.0 and to 1.5 Pa,the (002) preferential growth orientation changed first into a mixture of (200) and (100),and finally into (100) orientation.Possible mechanism responsible for the impact of the pressure on the preferred orientation was tentatively discussed.We suggest that a combination of FTIR and XRD be capable of effectively characterizing the preferential growth orientation of polycrystalline AlN thin films.

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