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等离子体源辅助磁控溅射法低温(200℃)制备多晶硅薄膜

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Indexed by:期刊论文

Date of Publication:2012-05-25

Journal:真空

Included Journals:ISTIC

Volume:49

Issue:3

Page Number:47-50

ISSN No.:1002-0322

Key Words:多晶硅薄膜;电感耦合等离子体;磁控溅射;拉曼散射;红外光谱

Abstract:利用电感耦合等离子体辅助中频直流脉冲磁控溅射技术在200℃成功制备出多晶硅薄膜.详细介绍了等离子体源辅助磁控溅射技术制备多晶硅的工艺过程,并对辅助等离子体源放电功率对硅薄膜结晶度的影响进行了研究.利用拉曼散射、X射线衍射、傅里叶红外光谱对所制备的硅薄膜进行了表征.

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