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Hydrogen plasma induced crystallization of Si thin films by remote inductively coupled plasma source assistant pulsed dc twin magnetron sputtering

Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2012-03-15

Journal: SURFACE & COATINGS TECHNOLOGY

Included Journals: EI、SCIE

Volume: 206

Issue: 14

Page Number: 3159-3164

ISSN: 0257-8972

Key Words: Micro-crystalline silicon; Magnetron sputtering; Inductively coupled plasma; Langmuir probe; Optical emission spectrum

Abstract: Hydrogenated microcrystalline silicon thin films (mu c-Si:H) were deposited by remote inductively coupled plasma assistant pulsed dc twin magnetron sputtering at temperatures below 300 degrees C. The formation of mu c-Si:H was only found in the environment of hydrogen plasma, where Ar and H-2 mixed gas was used. In pure argon plasma or without the assistance of ICP in the Ar/H-2 gas mixtures, all the samples were amorphous structure. It suggested that ICP hydrogen plasma which enhanced the density and energy of H radicals played the key role in the formation of mu c-Si:H films. (C) 2011 Elsevier B.V. All rights reserved.

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