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Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates

Paper Publications

[201]Qin, Fu-Wen, Zhong, Miao-Miao, Liu, Yue-Mei, Wang, Hui, Bian, Ji-Ming, Chong, Zhao, Yue, Zhang, Dong, Li, Qin-ming, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-tem...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(2,SI):969-973
[202]Cheng, Chuan Hui, Liang, Ze Shan, Du, Guo Tong, Wang, Li Gang, Gao, Guo Dong, Zhou, Ting, Bian, Ji Ming, Luo, Ying Min, CH (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light...[J],APPLIED PHYSICS LETTERS,2014,104(4)
[203]Zhang, Zhikun, Bian, Jiming, Yuzhi, Junfeng, Qin, Fuwen, Luo, Yingmin, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Ultra-low threshold optically pumped random laser emission behavior of highly oriented pyrolyti...[J],MATERIALS LETTERS,2014,115:261-264
[204]Zhong, M. M., Zhang, D., Wang, H., E. P., Bian, J. M., C., Liu, Y. M., Qin, F. W., JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substra...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2014,583:39-42
[205]张志坤, 章俞之, 边继明, 孙景昌, 秦福文, 刘维峰, 骆英民, Bian, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..石墨衬底上低维ZnO纳米材料的生长(英文)[J],无机材料学报,2014,29(01):103-107
[206]边继明, 秦福文.Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate...[J],Advanced Materials Research,2014,912(4):210-213
[207]边继明.Structural and Optical Properties of VO2 Film Grown on Sapphire Substrate by Pulsed Laser Deposit...[J],Advanced Materials Research,2014,912(4):325-328
[208]边继明, 秦福文.In-Situ AlN Induced Valence State Variation of V in Vanadium Oxide Films Investigated by XPS[J],Journal of Material Science and Technology Research,2014,1(1):15-21
[209]边继明, 秦福文.A comparative study of intermediate layers for the growth of high crystalline GaN films on amorph...[J],Materials Science in Semiconductor Processing,2014,26(c):182-186
[210]Qin, Fuwen, Zhong, Miaomiao, Wang, Chong, Liu, Yuemei, Bian, Jiming, Enping, Hui, Zhang, Dong, JM (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(12):5069-5074

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