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黄正兴
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Associate Professor Supervisor of Master's Candidates
Paper Publications
[1]孔铭扬, 刘志春, 王海刚, 徐德志, 王瀚彬, 赵祉澎, huangzhengxing, Junsheng Liang.Remarkable enhancement of thermal conductivity induced by coordination transition in SiO2 thin fi...[J],Journal of Materials Science,2024
[2]He, Tiantian, Li, Ting, Huang, Zhengxing, Tang, Zhenan, Guan, Xiangyu, ZX (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Key Lab Liaoning Integrated Circuits Technol, Dalian 116024, Peoples R China..Mechanical and thermal properties of the coaxial carbon nanotube@boron nitride nanotube composi...[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2019,107:182-186
[3]贺天天, 李婷, 黄正兴, 唐祯安.Mechanical and thermal properties of the coaxial carbon nanotube@boron[J],Physica E,2019,107:182-186
[4]Qu, Shilian, Tang, Zhenan, Jia, Yuzhen, Lian, YouYun, Liu, Xiang, Wei, Sun, Hao, Kreter, Arkadi, Yuan, Yue, Cheng, Long, Huang, Zhengxing, Xu, Ben, Chen, Wanqi, Cui, W (reprint author), Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat, Beijing 100084, Peoples R China..Degradation of thermal conductivity of the damaged layer of tungsten irradiated by helium-plasm...[J],FUSION ENGINEERING AND DESIGN,2018,137:97-103
[5]黄正兴, 孙豪, 李奇松, 管相宇.InSb薄膜热导率温度特性及传热机理[J],大连理工大学学报,2018,58(5):519-525
[6]Li, Ting, Tang, Zhenan, Huang, Zhengxing, Yu, Jun, ZX (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Key Lab Liaoning Integrated Circuits Technol, Dalian 116024, Peoples R China..Substrate effects on the thermal performance of in-plane graphene/hexagonal boron nitride heter...[J],CARBON,2018,130:396-400
[7]曲世联, 陈婉琦, 黄正兴.He注入对W在瞬态热负荷条件下熔化行为的影响[J],稀有金属,2018,28:283-
[8]Li, Qisong, Zhang, Long, Huang, Zhengxing, Kui, Sun, Hao, Wei, Jingsong.Temperature dependent thermal conductivity and transition mechanism in amorphous and crystallin...[J],SCIENTIFIC REPORTS,2017,7(1):13747
[9]Li, Ting, Tang, Zhenan, Huang, Zhengxing, Yu, Jun, ZX (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Key Lab Liaoning Integrated Circuits Technol, Dalian 116024, Peoples R China..Thermal boundary resistance between the polycrystalline graphene and the amorphous SiO2 substra...[J],CHEMICAL PHYSICS LETTERS,2017,685:349-353
[10]Huang, Zhengxing, Wang, Jiaqi, Bai, Suyuan, Guan, Jingwei, Zhang, Fengtian, Tang, Zhenan, ZX (reprint author), Dalian Univ Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China..Size Effect of Heat Transport in Microscale Gas Gap[J],IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS,2017,64(9):7387-7391
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