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Engineer Supervisor of Master's Candidates

Paper Publications

[71]Liu, Jianxun, Liang, Hongwei, Yang, Xia, Xiaochuan, Huang, Huolin, Tao, Pengcheng, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,60:66-70
[72]Xia, Xiaochuan, Yang, Chao, Liu, Yang, Shen, Rensheng, Xu, Mengxiang, Du, Guotong, Liang, Hongwei, Geng, Xinlei, Chen, Yuanpeng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(3):2598-2601
[73]Liang, Hongwei, Du, Guotong, Tao, Pengcheng, Xia, Xiaochuan, Chen, Yuanpeng, Zhang, Kexiong, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(3)
[74]Tao, Pengcheng, Luo, Yingmin, Zhang, Yuantao, Liu, Jianxun, Zhu, Zhifu, Yang, Shen, Rensheng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Chen, Yuanpeng, Yang, Chao, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,41:291-296
[75]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Li, Binghui, Yang, Xia, Xiaochuan, Huang, Huolin, Sandhu, Qasim Abbas, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J],RSC ADVANCES,2016,6(65):60068-60073
[76]Liang, Hongwei, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, Chen, Yuanpeng, Xia, Xiaochuan, Zhang, Chao, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:582-586
[77]Tao, Pengcheng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Liu, Yang, Jiang, Jianhua, Huang, Huishi, Feng, Qiuju, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, 2 Linggong Rd, High Tech Pk, Dalian 116024, Peoples R China..Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6...[J],SUPERLATTICES AND MICROSTRUCTURES,2015,85:482-487
[78]Liang, Hongwei, Chen, Yuanpeng, Luo, Yingmin, Du, Guotong, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Influence of Sb valency on the conductivity type of Sb-doped ZnO[J],THIN SOLID FILMS,2015,589:199-202
[79]Chen, Yuanpeng, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Tao, Pengcheng, Shen, Rensheng, Liu, Yang, Feng, Yanbin, Zheng, Yuehong, Li, Xiaona, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The lattice distortion of beta-Ga2O3 film grown on c-plane sapphire[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(5):3231-3235
[80]Cai, Xin, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Luo, Yingmin, Du, Guotong, Liu, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MO...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(3):1591-1596

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