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Engineer Supervisor of Master's Candidates

Paper Publications

[81]Chen, Yuanpeng, Liang, Hongwei, Xia, Xiaochuan, Shen, Rensheng, Liu, Yang, Luo, Yingmin, Du, Guotong, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Effect of growth pressure on the characteristics of beta-Ga2O3 films grown on GaAs (100) substr...[J],APPLIED SURFACE SCIENCE,2015,325(C):258-261
[82]Zhang, Kexiong, Shen, Rensheng, Wang, Dongsheng, Liang, Hongwei, Du, Guotong, Luo, Yingmin, Xia, Xiaochuan, Liu, Yang, Deng, Qunxiong, Guo, Wenping, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by...[J],PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2014,64:57-62
[83]Tao, Pengcheng, Deng, Qunxiong, Du, Guotong, Liang, Hongwei, Wang, Dongsheng, Xia, Xiaochuan, Feng, Qiuju, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Luo, Yingmin, Guo, Wenping, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx inter...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2014,27:841-845
[84]Tao, Pengcheng, Luo, Yingmin, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Feng, Qiuju, Wang, Dongsheng, Liu, Yang, Shen, Rensheng, Zhang, Kexiong, Cai, Xin, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25(10):4268-4272
[85]Zhang, Kexiong, Liang, Hongwei, Liu, Yang, Shen, Rensheng, Guo, Wenping, Wang, Dongsheng, Xia, Xiaochuan, Tao, Pengcheng, Yang, Chao, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunnelin...[J],SCIENTIFIC REPORTS,2014,4:6322
[86]Zhang, Kexiong, Du, Guotong, Liang, Hongwei, Shen, Rensheng, Song, Shiwei, Wang, Dongsheng, Liu, Yang, Xia, Xiaochuan, Yang, Dechao, Luo, Yingmin, KX (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,116(4):1561-1566
[87]Yang Dechao, Chang Yuchun, Yu Zhennan, Xia Xiaochuan, Shen Rensheng, Liu Yang, Li Pengchong, Qiu Yu, Liang Hongwei, Du Guotong, Zhang Yuantao, Zhang, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China..Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate[J],CHEMICAL RESEARCH IN CHINESE UNIVERSITIES,2014,30(4):556-559
[88]Wang, Dongsheng, Liang, Hongwei, Tao, Pengcheng, Zhang, Kexiong, Song, Shiwei, Liu, Yang, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, HW (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China..Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001)[J],SUPERLATTICES AND MICROSTRUCTURES,2014,70:54-60
[89]Yang, Dechao, Song, Shiwei, Zhang, Kexiong, Yu, Zhennan, Yuantao, Du, Guotong, Liang, Hongwei, Qiu, Yu, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, YT (reprint author), Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130023, Peoples R China..Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by...[J],APPLIED SURFACE SCIENCE,2014,295:26-30
[90]Zhang, Kexiong, Liang, Hongwei, Shen, Rensheng, Wang, Dongsheng, Tao, Pengcheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN he...[J],APPLIED PHYSICS LETTERS,2014,104(5)

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