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Engineer Supervisor of Master's Candidates

Paper Publications

[61]刘建勋, lianghongwei, xiaxiaochuan, huanghuolin, liuyang, Shen Rensheng, Luo Yingmin, duguotong.含InGaN插入层的非故意掺杂高阻GaN的外延生长和特性研究[A],第一届全国宽禁带半导体学术及应用技术会议,2022,28-29
[62]Yunjie Ke, zhangkexiong, duguotong, 柯昀洁, lianghongwei, Shen Rensheng, Shiwei Song, 宋世巍, xiaxiaochuan, liuyang.喷淋头高度对InGaN/GaN量子阱生长的影响[A],第十七届全国化合物半导体材料微波器件和光电器件学术会议,2022,65-68
[63]柯昀洁, lianghongwei, Shen Rensheng, 宋世巍, xiaxiaochuan, liuyang, zhangkexiong, duguotong.喷淋头高度对InGaN/GaN量子阱生长的影响[J],发光学报,2022,4:469-473
[64]duguotong, liuyang, 柳杨, Shiwei Song, 宋世巍, Xin Dong, 董鑫, zhangkexiong, 蔡旭浦, Xupu Cai, Yuantao Zhang, Baolin Zhang, 张源涛, Guoguang Wu, 吴国光, Wang Zhao, 赵旺, xiaxiaochuan, lianghongwei.基于InN和ZnO纳米结构材料的电致发光器件[A],第十七届全国化合物半导体材料微波器件和光电器件学术会议,2022,334-335
[65]Shen Rensheng, qilin, liuyang, 张笑, 张玉书, duguotong.基于Tapered FBG温度不敏感的高压传感器[A],全国第14次光纤通信暨第15届集成光学学术会议,2022,333-335
[66]Shen Rensheng, liuyang, duguotong.基于tapered FBG温度不敏感的高压传感器[J],光电子激光,2022,21(suppl.):34-36
[67]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Abbas, Qasim, Yang, Luo, Yingmin, Zhang, Yuantao, Yan, Long, Han, Xu, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOC...[J],JOURNAL OF ALLOYS AND COMPOUNDS,2018,735:1239-1244
[68]Chen, Yuanpeng, Xia, Xiaochuan, Liang, Hongwei, Abbas, Qasim, Du, Guotong, Liu, Yang, HW (reprint author), Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China..Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al...[J],CRYSTAL GROWTH & DESIGN,2018,18(2):1147-1154
[69]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Zheng, Xiantong, Yang, Xia, Xiaochuan, Abbas, Qasim, Huang, Huolin, Shen, Rensheng, Luo, Yingmin, HW (reprint author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China..Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heter...[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(33):18095-18101
[70]Liu, Jianxun, Du, Guotong, Liang, Hongwei, Xia, Xiaochuan, Yang, Jun, Abbas, Qasim, Shen, Rensheng, Luo, Yingmin, Zhang, Yuantao, HW (reprint author), Dalian Univ Technol, Sch Microelect, Sch Phys, Dalian 116024, Peoples R China..Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Conte...[J],CRYSTAL GROWTH & DESIGN,2017,17(6):3411-3418

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