标题：
Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes
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论文类型：
期刊论文
发表刊物：
APPLIED PHYSICS LETTERS
收录刊物：
SCIE、EI、Scopus
卷号：
100
期号：
10
ISSN号：
0003-6951
摘要：
Ultraviolet electroluminescence was demonstrated from a p-ZnO:As/n-SiC(6H) heterojunction light-emitting diode at room-temperature. The p-ZnO:As was fabricated by out-diffusion of arsenic atoms from a sandwiched GaAs interlayer on SiC substrate. The p-type doping was confirmed by both Hall and low-temperature photoluminescence measurements. Under forward bias, an intense ultraviolet emission centered at 384 nm was achieved from ZnO side of the diode. Furthermore, the light-output-current characteristic was determined to evaluate the high-efficiency electroluminescence performance of the diode. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694025]
发表时间：
2012-03-05
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院