标题：
Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere
点击次数：
论文类型：
期刊论文
发表刊物：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：
EI、SCIE
卷号：
23
期号：
2
页面范围：
542-545
ISSN号：
0957-4522
摘要：
Ga2O3 thin films were deposited on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition. The influence of annealing in N-2 atmosphere at the temperature in the range of 800-1,000 A degrees C was investigated by X-ray diffraction and optical transmittance spectra. With an increase of annealing temperature from 800 to 950 A degrees C, the transformation from the initial amorphous film to polycrystalline beta-Ga2O3 thin film was observed, and the transmittance was also improved remarkably. The optical band gap energy of the sample annealed at 950 A degrees C was evaluated as similar to 5 eV. Whereas, after an annealing at 1,000 A degrees C, the crystal quality became worse and the transmittance degraded. The mechanism of annealing in N-2 atmosphere was discussed in view of phase transition.
发表时间：
2012-02-01
学位：博士
职称：副教授
学科：微电子学与固体电子学
所在单位：集成电路学院